Photomicrosensor (Reflective)
EE-SY125
I
Dimensions
Note:
All units are in millimeters unless otherwise indicated.
I
Features
•
Ultra-compact model.
•
PCB surface mounting type
I
Absolute Maximum Ratings (Ta = 25°C)
Item
Emitter
Forward current
Pulse forward
current
Reverse voltage
Detector
Symbol
I
F
I
FP
V
R
Rated value
50 mA (see note 1)
1 A (see note 2)
4V
30 V
5V
20 mA
75 mW (see note 1)
–25°C to 85°C
–40°C to 100°C
260°C (see note 3)
Collector–Emitter
V
CEO
voltage
Emitter–Collector
V
ECO
voltage
Collector current
Collector
dissipation
I
C
P
C
Topr
Tstg
Tsol
Internal Circuit
A
C
Ambient
Operating
temperature Storage
Soldering temperature
Unless otherwise specified, the
tolerances are
±0.15
mm.
K
E
Note: 1.
Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2.
The pulse width is 10
µs
maximum with a frequency of 100 Hz.
3.
Complete soldering within 10 seconds.
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
I
Ordering Information
Description
Photomicrosensor (reflective)
Model
EE-SY125
I
Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Forward voltage
Reverse current
Peak emission wavelength
Detector
Light current
V
F
I
R
λ
P
I
L
Symbol
Value
1.2 V typ., 1.4 V max.
0.01
µA
typ., 10
µA
max.
950 nm typ.
50
µA
min., 300
µA
max.
I
F
= 20 mA
V
R
= 4 V
I
F
= 4 mA
I
F
= 4 mA, V
CE
= 2 V
Aluminum-deposited surface,
d = 1 mm (see note)
V
CE
= 10 V, 0
lx
I
F
=4 mA, V
CE
= 2 V with no reflection
---
V
CE
= 10 V
V
CC
= 2 V, R
L
= 1 kΩ, I
L
= 100
µA
V
CC
= 2 V, R
L
= 1 kΩ, I
L
= 100
µA
Condition
Dark current
Leakage current
Collector–Emitter saturated
voltage
Peak spectral sensitivity
wavelength
Rising time
Falling time
I
D
I
LEAK
V
CE
(sat)
λ
P
tr
tf
2 nA typ., 200 nA max.
200 nA max.
---
930 nm typ.
35
µs
typ.
25
µs
typ.
Note:
The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
298
Photomicrosensor (Reflective)
EE-SY125
OMRON [ OMRON ELECTRONICS LLC ]
