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2N5064G 参数 Datasheet PDF下载

2N5064G图片预览
型号: 2N5064G
PDF下载: 下载PDF文件 查看货源
内容描述: 可控硅整流器0.8 A RMS , 30 A ???? 200 V [SILICON CONTROLLED RECTIFIERS 0.8 A RMS, 30 − 200 V]
分类和应用: 可控硅整流器
文件页数/大小: 8 页 / 124 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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2N5060 Series
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Annular PNPN devices designed for high volume consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO−92/TO-226AA package which
is readily adaptable for use in automatic insertion equipment.
Features
http://onsemi.com
Sensitive Gate Trigger Current
200
mA
Maximum
Low Reverse and Forward Blocking Current
50
mA
Maximum,
T
C
= 110°C
Low Holding Current
5 mA Maximum
Passivated Surface for Reliability and Uniformity
These are Pb−Free Devices
Rating
Peak Repetitive Off−State Voltage (Note 1)
(T
J
=
*40
to 110°C, Sine Wave,
2N5060
50 to 60 Hz, R
GK
= 1 kW)
2N5061
2N5062
2N5064
On-State Current RMS (180° Conduction
Angles; T
C
= 80°C)
*Average On-State Current
(180° Conduction Angles)
Symbol
V
DRM,
V
RRM
SILICON CONTROLLED
RECTIFIERS
0.8 A RMS, 30
200 V
G
A
Value
Unit
V
30
60
100
200
0.8
A
A
0.51
0.255
TO−92
CASE 29
STYLE 10
12
3
50xx
Y
WW
Specific Device Code
= Year
= Work Week
K
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
MARKING
DIAGRAM
2N
50xx
YWW
I
T(RMS)
I
T(AV)
(T
C
= 67°C)
(T
C
= 102°C)
I
TSM
I
2
t
I
T(AV)
*Peak Non-repetitive Surge Current,
T
A
= 25°C (1/2 cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations (t = 8.3 ms)
*Average On-State Current
(180° Conduction Angles)
(T
C
= 67°C)
(T
C
= 102°C)
10
0.4
0.51
0.255
0.1
0.01
1.0
5.0
−40
to
+110
−40
to
+150
A
A
2
s
A
*Forward Peak Gate Power (Pulse Width
v
1.0
msec;
T
A
= 25°C)
*Forward Average Gate Power
(T
A
= 25°C, t = 8.3 ms)
*Forward Peak Gate Current (Pulse Width
v
1.0
msec;
T
A
= 25°C)
*Reverse Peak Gate Voltage (Pulse Width
v
1.0
msec;
T
A
= 25°C)
*Operating Junction Temperature Range
*Storage Temperature Range
P
GM
P
G(AV)
I
GM
V
RGM
T
J
T
stg
W
W
A
V
1
2
3
PIN ASSIGNMENT
Cathode
Gate
Anode
ORDERING INFORMATION
°C
°C
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*Indicates JEDEC Registered Data.
©
Semiconductor Components Industries, LLC, 2011
September, 2011
Rev. 10
1
Publication Order Number:
2N5060/D