UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR
NPN GENERAL PURPOSE AMPLIFIER
DESCRIPTION
The device is designed for low noise, high gain, general
purpose amplifier applications at collector currents from
1µA to 50mA.
1
TO-92
1:EMITTER
2:BASE
3:COLLECTOR
MAXIMUM RATINGS
(TA=25°C, unless otherwise noted)
RATING
SYMBOL
2N5088
2N5089
UNIT
Collector-Emitter voltage
V
CEO
30
25
V
Collector-Base voltage
V
CBO
35
30
V
Emitter-base voltage
V
EBO
4.5
V
Collector current-continuous
Ic
100
mA
Operating and Storage
T
j,
T
stg
-55 ~ +150
°C
Junction Temperature Range
Note 1: These ratings are based on a maximum junction temperature of 150 degrees C.
Note 2: These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL CHARACTERISTICS
(TA=25°C, unless otherwise noted)
PARAMETER
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to
Ambient
SYMBOL
P
D
R
θJC
R
θJA
MAX
625
5
83.3
200
UNIT
mW
mW/°C
°C/W
°C/W
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R201-040,A
ONSEMI [ ON SEMICONDUCTOR ]
