UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS
(Ta=25
°
C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(note)
2N5088
2N5089
Collector-Base Breakdown Voltage
2N5088
2N5089
Collector Cut-Off Current
2N5088
2N5089
Emitter Cutoff Current
SYMBOL
V
(BR)CEO
TEST CONDITIONS
I
C
=1.0mA, I
B
=0
MIN
MAX
UNIT
30
25
V
(BR)CBO
I
C
=100µA, I
E
=0
35
30
I
CBO
V
CB
=20V, I
E
=0
V
CB
=15V, I
E
=0
I
EBO
V
EB
=3.0V, I
C
=0
V
EB
=4.5V, I
C
=0
50
100
2N5088
2N5089
2N5088
2N5089
2N5088
2N5089
300
400
350
450
300
400
900
1200
50
50
V
V
V
V
nA
nA
nA
nA
ON CHARACTERISTICS
DC Current Gain
h
FE
V
CE
=5.0V, I
C
=100µA
V
CE
=5.0V, I
C
=1.0mA
V
CE
=5.0V, I
C
=10mA
(NOTE)
I
C
=10mA, I
B
=1.0mA
I
C
=10mA, V
CE
=5.0V
Collector-Emitter Saturation Voltage
V
CE
(sat)
Base-Emitter On Voltage
V
BE
(on)
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
V
CE
=5.0mA, Ic=500
µ
A, f=20MHz
Collector-Base Capacitance
Ccb
V
CB
=5.0V, I
E
=0, f=100kHz
Emitter-Base Capacitance
Ceb
V
EB
=0.5V, Ic=0, f=100kHz
Small-Signal Current Gain
h
FE
V
CE
=5.0V, Ic=1.0mA, f=1.0kHz
2N5088
2N5089
Noise Figure
NF
V
CE
=5.0V, Ic=100
µ
A, R
s
=10k
Ω,
2N5088
f=10KHz to 15.7kHz
2N5089
Note: Pulse Test: Pulse Width≤300
µ
s, Duty Cycle≤2.0%.
0.5
0.8
50
4
10
350
450
1400
1800
3.0
2.0
V
V
MHz
pF
pF
dB
dB
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R201-040,A
ONSEMI [ ON SEMICONDUCTOR ]
