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2N5458 参数 Datasheet PDF下载

2N5458图片预览
型号: 2N5458
PDF下载: 下载PDF文件 查看货源
内容描述: JFET的 - 通用 [JFETs - General Purpose]
分类和应用: 晶体小信号场效应晶体管
文件页数/大小: 4 页 / 60 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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2N5457, 2N5458
5
4
VGS(off)
^
-3.5 V
3
2
1
0
-2 V
-3 V
0
5
10
15
20
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
25
0
-5
-3
-2
-1
-4
VGS, GATE-SOURCE VOLTAGE (VOLTS)
0
-1 V
VGS = 0 V
I D , DRAIN CURRENT (mA)
5
VGS(off)
^
-3.5 V
4
3
VDS = 15 V
2
1
I D , DRAIN CURRENT (mA)
Figure 4. Typical Drain Characteristics
Figure 5. Common Source Transfer
Characteristics
10
10
VGS = 0 V
I D , DRAIN CURRENT (mA)
-1 V
6
4
2
0
-2 V
-3 V
-4 V
-5 V
0
5
10
15
20
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
25
I D , DRAIN CURRENT (mA)
8
VGS(off)
^
-5.8 V
VGS(off)
^
-5.8 V
8
6
VDS = 15 V
4
2
0
-7
-6
-5
-4
-3
-2
-1
VGS, GATE-SOURCE VOLTAGE (VOLTS)
0
Figure 6. Typical Drain Characteristics
Figure 7. Common Source Transfer
Characteristics
NOTE:
Note: Graphical data is presented for dc conditions. Tabular data is given
for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under
dc conditions, self heating in higher IDSS units reduces IDSS.
http://onsemi.com
3