2N7002L
Small Signal MOSFET
60 V, 115 mA, N−Channel SOT−23
Features
•
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Drain−Source Voltage
Drain−Gate Voltage (R
GS
= 1.0 MW)
Drain Current
− Continuous T
C
= 25°C (Note 1)
− Continuous
T
C
= 100°C (Note 1)
− Pulsed (Note 2)
Gate−Source Voltage
− Continuous
− Non−repetitive (t
p
≤
50
ms)
Symbol
V
DSS
V
DGR
I
D
I
D
I
DM
Value
60
60
±
115
±
75
±
800
Unit
Vdc
Vdc
mAdc
60 V
V
(BR)DSS
http://onsemi.com
R
DS(on)
MAX
7.5
W
@ 10 V,
500 mA
N−Channel
3
I
D
MAX
115 mA
V
GS
V
GSM
±
20
±
40
Vdc
Vpk
1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
(Note 3) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 4) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
R
qJA
T
J
, T
stg
417
−55 to
+150
°C/W
°C
702
W
Unit
mW
mW/°C
°C/W
mW
mW/°C
3
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
1
2
R
qJA
P
D
SOT−23
CASE 318
STYLE 21
702
W
1
2
Gate
= Device Code
= Work Week
Source
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
3. FR−5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
ORDERING INFORMATION
Device
2N7002LT1
2N7002LT3
2N7002LT1G
2N7002LT3G
SOT−23
(Pb−free)
Package
SOT−23
Shipping
†
3000 Tape & Reel
10,000 Tape & Reel
3000 Tape & Reel
10,000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2004
1
July, 2004 − Rev. 2
Publication Order Number:
2N7002L/D
ONSEMI [ ON SEMICONDUCTOR ]
