ON Semiconductort
NPN Silicon General Purpose
Amplifier Transistor
This NPN transistor is designed for general purpose amplifier
applications. This device is housed in the SOT-416/SC–90 package
which is designed for low power surface mount applications, where
board space is at a premium.
•
Reduces Board Space
•
High hFE, 210–460 (typical)
•
Low VCE(sat), < 0.5 V
•
Available in 8 mm, 7-inch/3000 Unit Tape and Reel
MAXIMUM RATINGS
(TA = 25°C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current — Continuous
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
Value
50
50
5.0
100
Unit
Vdc
Vdc
Vdc
mAdc
2SC4617
NPN GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
3
2
1
CASE 463–01, STYLE 1
SOT–416/SC–90
DEVICE MARKING
2SC4617 = B9
COLLECTOR
3
THERMAL CHARACTERISTICS
Rating
Power Dissipation(1)
Junction Temperature
Storage Temperature Range
Symbol
PD
TJ
Tstg
Max
125
150
–55 ~ +150
Unit
mW
°C
°C
1
BASE
2
EMITTER
ELECTRICAL CHARACTERISTICS
(TA = 25°C)
Characteristic
Collector-Base Breakdown Voltage (IC = 50
µAdc,
IE = 0)
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
Emitter-Base Breakdown Voltage (IE = 50
µAdc,
IE = 0)
Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0)
Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IB = 0)
Collector-Emitter Saturation Voltage(2)
(IC = 60 mAdc, IB = 5.0 mAdc)
DC Current Gain(2)
(VCE = 6.0 Vdc, IC = 1.0 mAdc)
Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz)
Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1 MHz)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
—
hFE
120
fT
COB
—
—
—
180
2.0
560
—
—
MHz
pF
—
0.4
—
Min
50
50
5.0
—
—
Typ
—
—
—
—
—
Max
—
—
—
0.5
0.5
Unit
Vdc
Vdc
Vdc
µA
µA
Vdc
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width
≤
300
µs,
D.C.
≤
2%.
©
Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 3
Publication Order Number:
2SC4617/D
ONSEMI [ ON SEMICONDUCTOR ]
