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BAS21LT1G 参数 Datasheet PDF下载

BAS21LT1G图片预览
型号: BAS21LT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 高压开关二极管 [High Voltage Switching Diode]
分类和应用: 二极管开关高压
文件页数/大小: 6 页 / 56 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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BAS19LT1, BAS20LT1,
BAS21LT1, BAS21DW5T1
Preferred Devices
High Voltage
Switching Diode
Device Marking:
BAS19LT1 = JP
BAS20LT1 = JR
BAS21LT1 = JS
BAS21DW5T1 = JS
Features
http://onsemi.com
HIGH VOLTAGE
SWITCHING DIODE
SOT−23
3
1
CATHODE
ANODE
SC−88A
5
1
CATHODE
ANODE
4
CATHODE
3
ANODE
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
BAS19
BAS20
BAS21
Repetitive Peak Reverse Voltage
BAS19
BAS20
BAS21
Continuous Forward Current
Peak Forward Surge Current
Maximum Junction Temperature
Power Dissipation (Note 4)
I
F
I
FM(surge)
T
Jmax
P
D
V
RRM
120
200
250
200
625
150
385
mAdc
mAdc
°C
mW
Symbol
V
R
120
200
250
Vdc
Value
Unit
Vdc
MARKING DIAGRAMS
Jx M
SOT−23 (TO−236)
CASE 318
STYLE 8
Jx = Specific Device Code
x = P, R or S
M = Date Code
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
XX
d
SC−88A (SOT−353)
CASE 419A
XX = Specific Device Code
d
= Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
April, 2005 − Rev. 7
Publication Order Number:
BAS19LT1/D