BAT54SLT1
Preferred Device
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
http://onsemi.com
•
Extremely Fast Switching Speed
•
Low Forward Voltage − 0.35 V (Typ) @ I
F
= 10 mAdc
•
Pb−Free Package is Available
30 VOLT
DUAL HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
1
ANODE
2
CATHODE
MAXIMUM RATINGS
(T
J
= 125°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Forward Current (DC)
Junction Temperature
Storage Temperature Range
Symbol
V
R
P
F
225
1.8
I
F
T
J
T
stg
200 Max
−55 to 125
−55 to +150
mW
mW/°C
mA
°C
°C
1
2
3
Value
30
Unit
V
3
CATHODE/ANODE
MARKING
DIAGRAM
SOT−23
CASE 318
STYLE 11
1
LD3M
G
G
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
LD3
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
BAT54SLT1
BAT54SLT1G
Package
SOT−23
SOT−23
(Pb−Free)
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
October, 2005 − Rev. 9
Publication Order Number:
BAT54SLT1/D