MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Order this document
by BC546/D
NPN Silicon
COLLECTOR
1
2
BASE
3
EMITTER
BC546, B
BC547, A, B, C
BC548, A, B, C
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BC
546
65
80
BC
547
45
50
6.0
100
625
5.0
1.5
12
– 55 to +150
BC
548
30
30
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mA, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100
µAdc)
Emitter – Base Breakdown Voltage
(IE = 10
m
A, IC = 0)
Collector Cutoff Current
(VCE = 70 V, VBE = 0)
(VCE = 50 V, VBE = 0)
(VCE = 35 V, VBE = 0)
(VCE = 30 V, TA = 125°C)
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC546/547/548
V(BR)CEO
65
45
30
80
50
30
6.0
6.0
6.0
—
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
—
—
—
—
—
—
—
—
—
—
15
15
15
4.0
V
V(BR)CBO
V
V(BR)EBO
V
ICES
nA
µA
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1
ONSEMI [ ON SEMICONDUCTOR ]
