Transys
Electronics
L I M I T E D
TO-126 Plastic-Encapsulated Transistors
BD433/435/437
FEATURES
Power dissipation
P
CM:
1.25
W (Tamb=25℃)
1. EMITTER
2. COLLECTOR
TRANSISTOR (NPN)
TO-126
Collector current
4
I
CM:
Collector-base voltage
BD433
V
(BR)CBO
:
BD435
BD437
A
3. BASE
123
22 V
32 V
45 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
unless otherwise specified)
Test
conditions
BD433
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=
100
µA, I
E
=0
BD435
BD437
BD433
22
32
45
22
32
45
5
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=
100
mA, I
B
=0
I
E
=
100
µA, I
C
=0
V
CB
=
22
V, I
E
=0
BD435
BD437
V
Emitter-base breakdown voltage
V
(BR)EBO
V
BD433
BD435
BD437
BD433
BD435
BD437
Collector cut-off current
I
CBO
V
CB
=32V, I
E
=0
V
CB
=
45
V, I
E
=0
V
CE
=
22
V, I
E
=0
1
µA
Collector cut-off current
I
CEO
V
CE
=32V, I
E
=0
V
CE
=
45
V, I
E
=0
V
EB
=
5
V, I
E
=0
V
CE
=
1
V, I
C
=
500
mA
V
CE
=
5
V, I
C
=
10
mA
V
CE
=
1
V, I
C
=
2
A
I
C
=
2
A, I
B
=0.2A
V
CE
=
1
V, I
C
=
2
A
10
1
85
40
30
50
40
0.5
0.6
1.1
1.2
3
µA
Emitter cut-off current
I
EBO
h
FE(1)
h
FE(2)
µA
BD433/BD435
BD437
BD433/BD435
BD437
BD433/BD435
BD437
BD433/BD435
BD437
DC current gain
h
FE(3)
Collector-emitter saturation voltage
V
CE(sat)
V
Base-emitter voltage
Transition frequency
V
BE
V
MHz
f
T
V
CE
=
1
V, I
C
=
250
mA
ONSEMI [ ON SEMICONDUCTOR ]
