BS170
Preferred Device
Small Signal MOSFET
500 mA, 60 V
N−Channel TO−92 (TO−226)
Features
http://onsemi.com
•
Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Drain −Source Voltage
Gate−Source Voltage
− Continuous
− Non−repetitive (t
p
≤
50
ms)
Drain Current (Note)
Total Device Dissipation @ T
A
= 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
DS
V
GS
V
GSM
I
D
P
D
T
J
, T
stg
Value
60
±
20
±
40
0.5
350
−55 to
+150
Unit
Vdc
Vdc
Vpk
Adc
mW
°C
500 mA, 60 V
R
DS(on)
= 5
W
N−Channel
D
G
S
1. The Power Dissipation of the package may result in a lower continuous drain
current.
TO−92 (TO−226)
CASE 29
STYLE 30
12
3
MARKING DIAGRAM
& PIN ASSIGNMENT
BS170
YWW
1
Drain
2
Gate
Y
WW
3
Source
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2004
1
April, 2004 − Rev. 4
Publication Order Number:
BS170/D