BU406, BU407
NPN Power Transistors
These devices are high voltage, high speed transistors for horizontal
deflection output stages of TV’s and CRT’s.
Features
•
•
•
•
High Voltage: V
CEV
= 330 or 400 V
Fast Switching Speed: t
f
= 750 ns (max)
Low Saturation Voltage: V
CE(sat)
= 1 V (max) @ 5 A
Pb−Free Packages are Available*
http://onsemi.com
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
−
Continuous
−
Peak Repetitive
−
Peak (10 ms)
Base Current
Total Device Dissipation @ T
C
= 25_C
Derate above 25°C
Operating and Storage Junction
Temperature Storage
BU406
BU407
BU406
BU407
BU406
BU407
Symbol
V
CEO
V
CEV
V
CBO
V
EBO
I
C
Value
200
150
400
330
400
330
6
7
10
15
4
60
0.48
−65
to 150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
NPN SILICON
POWER TRANSISTORS
7 AMPERES
−
60 WATTS
150 AND 200 VOLTS
TO−220AB
CASE 221A−09
STYLE 1
1
2
3
I
B
P
D
T
J
, T
stg
Adc
W
W/_C
_C
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes1/8″ from Case for 5 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
2.08
70
260
Unit
_C/W
_C/W
_C
BU40xG
AY WW
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
BU40x = Specific Device Code
x = 6 or 7
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
BU406
BU406G
BU407
BU407G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Package
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
TO−220AB
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
©
Semiconductor Components Industries, LLC, 2009
May, 2009
−
Rev. 8
1
Publication Order Number:
BU406/D
ONSEMI [ ON SEMICONDUCTOR ]
