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D45H11 参数 Datasheet PDF下载

D45H11图片预览
型号: D45H11
PDF下载: 下载PDF文件 查看货源
内容描述: 互补硅功率晶体管 [Complementary Silicon Power Transistors]
分类和应用: 晶体晶体管功率双极晶体管局域网
文件页数/大小: 5 页 / 68 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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D44H Series (NPN),
D45H Series (PNP)
Preferred Devices
Complementary Silicon
Power Transistors
These series of plastic, silicon NPN and PNP power transistors can
be used as general purpose power amplification and switching such as
output or driver stages in applications such as switching regulators,
converters and power amplifiers.
Features
http://onsemi.com
Low Collector−Emitter Saturation Voltage
V
CE(sat)
= 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
D44H8, D45H8
D44H11, D45H11
Emitter Base Voltage
Collector Current
− Continuous
− Peak (Note 1)
Total Power Dissipation
@ T
C
= 25°C
@ T
A
= 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
60
80
V
EB
I
C
10
20
P
D
70
2.0
T
J
, T
stg
−55 to +150
°C
W
5.0
Vdc
Adc
Value
Unit
Vdc
10 AMP COMPLEMENTARY
SILICON POWER
TRANSISTORS 60, 80 VOLTS
4
MARKING
DIAGRAM
1
TO−220AB
CASE 221A−09
STYLE 1
2
3
D4xHyyG
AYWW
D4xHyy = Device Code
x = 4 or 5
yy = 8 or 11
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
TO−220
TO−220
(Pb−Free)
TO−220
TO−220
(Pb−Free)
TO−220
TO−220
(Pb−Free)
TO−220
TO−220
(Pb−Free)
Shipping
50 Units/Rail
50 Units/Rail
50 Units/Rail
50 Units/Rail
50 Units/Rail
50 Units/Rail
50 Units/Rail
50 Units/Rail
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
1.8
62.5
275
Unit
_C/W
_C/W
_C
D44H8
D44H8G
D44H11
D44H11G
D45H8
D45H8G
D45H11
D45H11G
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Width
v
6.0 ms, Duty Cycle
v
50%.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
Preferred
devices are recommended choices for future use
and best overall value.
1
February, 2006 − Rev. 9
Publication Order Number:
D44H/D