DAP222, DAP202U
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
Characteristic
Reverse Voltage Leakage Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
1.
2.
3.
DAP222
DAP202U
Symbol
I
R
V
F
V
R
C
D
t
rr
(2)
t
tt
(3)
Condition
V
R
= 70 V
I
F
= 100 mA
I
R
= 100
mA
V
R
= 6.0 V, f = 1.0 MHz
I
F
= 5.0 mA, V
R
= 6.0 V, R
L
= 100
W,
I
rr
= 0.1 I
R
I
F
= 5.0 mA, V
R
= 6.0 V, R
L
= 50
W,
I
rr
= 0.1 I
R
Min
—
—
80
—
—
−
Max
0.1
1.2
—
3.5
4.0
10.0
Unit
mAdc
Vdc
Vdc
pF
ns
t = 1
mS
t
rr
Test Circuit for DAP222 in Figure 4.
trr Test Circuit for DAP202U in Figure 5.
TYPICAL ELECTRICAL CHARACTERISTICS
100
IF, FORWARD CURRENT (mA)
T
A
= 85°C
10
T
A
= −40°C
IR , REVERSE CURRENT (µA)
10
T
A
= 150°C
T
A
= 125°C
1.0
0.1
T
A
= 85°C
T
A
= 55°C
1.0
T
A
= 25°C
0.01
T
A
= 25°C
0
10
20
30
40
V
R
, REVERSE VOLTAGE (VOLTS)
50
0.1
0.2
0.4
0.6
0.8
1.0
V
F
, FORWARD VOLTAGE (VOLTS)
1.2
0.001
Figure 1. Forward Voltage
Figure 2. Reverse Current
1.75
CD , DIODE CAPACITANCE (pF)
1.5
1.25
1.0
0.75
0
2
4
6
8
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
http://onsemi.com
2
ONSEMI [ ON SEMICONDUCTOR ]
