EMZ1DXV6T1,
EMZ1DXV6T5
Dual General Purpose
Transistors
NPN/PNP Dual (Complementary)
http://onsemi.com
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−563 which is designed for low
power surface mount applications.
Features
(3)
(2)
(1)
•
Lead−Free Solder Plating
•
Low V
CE(SAT)
,
t0.5
V
•
These are Pb−Free Devices
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
−60
−50
−6.0
−100
Unit
V
V
V
mAdc
Q
1
Q
2
(4)
(5)
(6)
6
1
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
Junction and Storage
Temperature Range
Symbol
P
D
357 (Note 1)
2.9 (Note 1)
R
qJA
350
(Note 1)
Max
500 (Note 1)
4.0 (Note 1)
R
qJA
T
J
, T
stg
250
(Note 1)
−55 to +150
Max
Unit
mW
mW/°C
°C/W
SOT−563
CASE 463A
STYLE 1
MARKING DIAGRAM
Symbol
P
D
Unit
mW
mW/°C
°C/W
°C
3Z M
G
G
3Z = Specific Device Code
M = Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2006
1
April, 2006 − Rev. 1
Publication Order Number:
EMZ1DXV6/D
ONSEMI [ ON SEMICONDUCTOR ]
