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LM385Z-2.5 参数 Datasheet PDF下载

LM385Z-2.5图片预览
型号: LM385Z-2.5
PDF下载: 下载PDF文件 查看货源
内容描述: 微功耗电压基准二极管 [MICROPOWER VOLTAGE REFERENCE DIODES]
分类和应用: 二极管
文件页数/大小: 7 页 / 114 K
品牌: ONSEMI [ ONSEMI ]
 浏览型号LM385Z-2.5的Datasheet PDF文件第1页浏览型号LM385Z-2.5的Datasheet PDF文件第3页浏览型号LM385Z-2.5的Datasheet PDF文件第4页浏览型号LM385Z-2.5的Datasheet PDF文件第5页浏览型号LM385Z-2.5的Datasheet PDF文件第6页浏览型号LM385Z-2.5的Datasheet PDF文件第7页  
LM285 LM385, B  
MAXIMUM RATINGS (T = 25°C, unless otherwise noted)  
A
Rating  
Symbol  
Value  
30  
Unit  
mA  
mA  
°C  
Reverse Current  
Forward Current  
I
R
I
F
10  
Operating Ambient Temperature Range  
T
A
LM285  
LM385  
– 40 to + 85  
0 to +70  
Operating Junction Temperature  
Storage Temperature Range  
T
+ 150  
°C  
°C  
J
T
stg  
– 65 to + 150  
ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise noted)  
A
LM285–1.2  
Typ  
LM385–1.2/LM385B–1.2  
Characteristic  
Reverse Breakdown Voltage (I  
Symbol  
Min  
Max  
Min  
Typ  
Max  
Unit  
I
20 mA)  
V
(BR)R  
V
Rmin  
R
LM285–1.2/LM385B–1.2  
1.223  
1.200  
1.235  
1.247 1.223  
1.270 1.210  
1.235  
1.235  
1.247  
1.260  
1.260  
1.273  
T
= T  
to T  
(Note 1)  
A
low  
LM385–1.2  
= T  
high  
1.205  
1.192  
T
A
to T  
(Note 1)  
low  
high  
Minimum Operating Current  
= 25°C  
I
µA  
Rmin  
T
A
8.0  
10  
20  
8.0  
15  
20  
T
= T  
to T (Note 1)  
high  
A
low  
Reverse Breakdown Voltage Change with Current  
1.0 mA, T = +25°C  
V  
(BR)R  
mV  
I
I
1.0  
1.5  
10  
1.0  
1.5  
20  
Rmin  
= T  
R
low  
I
A
T
to T  
(Note 1)  
high  
20 mA, T = +25°C  
A
1.0 mA  
= T  
R
A
T
A
to T (Note 1)  
20  
25  
low  
high  
Reverse Dynamic Impedance  
= 100 µA, T = +25°C  
Z
0.6  
80  
60  
20  
0.6  
80  
60  
20  
W
ppm/°C  
µV  
I
R
A
Average Temperature Coefficient  
10 µA 20 mA, T = T  
V  
/T  
(BR)  
I
to T  
(Note 1)  
high  
R
A
low  
Wideband Noise (RMS)  
= 100 µA, 10 Hz  
n
I
R
f
10 kHz  
Long Term Stability  
= 100 µA, T = +25°C ± 0.1°C  
S
ppm/  
kHR  
I
R
A
2
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