MAC15 Series
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
solid−state relays, motor controls, heating controls and power
supplies; or wherever full−wave silicon gate controlled solid−state
devices are needed. Triac type thyristors switch from a blocking to a
conducting state for either polarity of applied main terminal voltage
with positive or negative gate triggering.
Features
http://onsemi.com
•
Blocking Voltage to 800 V
•
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
•
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
•
Gate Triggering Guaranteed in Three Modes (MAC15 Series) or
Four Modes (MAC15A Series)
•
Pb−Free Packages are Available*
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage Note 1
(T
J
= −40 to +125°C, Sine Wave 50 to 60 Hz,
Gate Open)
MAC15A6
MAC15−8, MAC15A8
MAC15−10, MAC15A10
Peak Gate Voltage
(Pulse Width
v
1.0
msec;
T
C
= 90°C)
On−State Current RMS; Full Cycle Sine
Wave 50 to 60 Hz (T
C
= +90°C)
Circuit Fusing Consideration (t = 8.3 ms)
Peak Non−Repetitive Surge Current (One
Full Cycle Sine Wave, 60 Hz, T
C
= +80°C)
Preceded and Followed by Rated Current
Peak Gate Power
(T
C
= +80°C, Pulse Width = 1.0
ms)
Average Gate Power (T
C
= +80°C, t = 8.3 ms)
Peak Gate Current
(Pulse Width
v
1.0
msec;
T
C
= 90°C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM,
V
RRM
400
600
800
V
GM
I
T(RMS)
I
2
t
I
TSM
10
15
93
150
V
A
A
2
s
A
Value
Unit
V
TRIACS
15 AMPERES RMS
400 thru 800 VOLTS
MT2
G
MT1
MARKING
DIAGRAM
4
TO−220AB
CASE 221A
STYLE 4
1
MAC15xxG
AYWW
2
3
MAC15xx
xx
= Specific Device Code
= See Table on Page 2
P
GM
P
G(AV)
I
GM
T
J
T
stg
20
0.5
2.0
−40 to +125
−40 to +150
W
W
A
°C
°C
1
2
3
4
PIN ASSIGNMENT
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
1
August, 2006 − Rev. 3
Publication Order Number:
MAC15A4/D
ONSEMI [ ON SEMICONDUCTOR ]
