MBR150, MBR160
MBR160 is a Preferred Device
Axial Lead Rectifiers
The MBR150/160 series employs the Schottky Barrier principle in a
large area metal−to−silicon power diode. State−of−the−art geometry
features epitaxial construction with oxide passivation and metal
overlap contact. Ideally suited for use as rectifiers in low−voltage,
high−frequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
http://onsemi.com
•
•
•
•
•
Low Reverse Current
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
These are Pb−Free Devices*
SCHOTTKY BARRIER
RECTIFIERS
1.0 AMPERE − 50 AND 60 VOLTS
Mechanical Characteristics:
•
Case: Epoxy, Molded
•
Weight: 0.4 Gram (Approximately)
•
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
•
Polarity: Cathode Indicated by Polarity Band
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
MBR150
MBR160
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
MBR150
MBR160
V
RWM
V
R
V
R(RMS)
I
O
35
42
1.0
V
A
A
MBR1x0
YYWW
G
G
Symbol
V
RRM
50
60
Value
Unit
V
DO−41
AXIAL LEAD
CASE 59
STYLE 1
MARKING DIAGRAM
Average Rectified Forward Current (Note 1)
(V
R(equiv)
v
0.2 V
R
(dc), T
L
= 90°C,
R
qJA
= 80°C/W, P.C. Board Mounting, T
A
= 55°C)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions,
halfwave, single phase, 60 Hz, T
L
= 70°C)
Operating and Storage Junction Temperature
Range (Reverse Voltage Applied)
I
FSM
25
(for one
cycle)
− 65 to
+150
A
T
J
, T
stg
°C
A
= Assembly Location
MBR1x0 = Device Code
x = 5 or 6
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
(Notes 1 and 2)
Characteristic
Thermal Resistance, Junction−to−Ambient
Symbol
R
qJA
Max
80
Unit
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Lead Temperature reference is cathode lead 1/32″ from case.
2. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
Preferred
devices are recommended choices for future use
and best overall value.
1
June, 2006 − Rev. 8
Publication Order Number:
MBR150/D
ONSEMI [ ON SEMICONDUCTOR ]
