MBR20L80CT, MBRF20L80CT
MAXIMUM RATINGS
(Per Diode Leg)
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(T
C
= 137°C)
Per Diode
Per Device
Peak Repetitive Forward Current
(Square Wave, 20 kHz, T
C
= 151°C)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Storage Temperature
Operating Junction Temperature (Note 1)
ESD Ratings: Machine Model = C
Human Body Model = 3B
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
Value
80
Unit
V
A
10
20
20
175
−65
to +175
−20
to +150
> 400
> 8000
A
A
°C
°C
V
I
FM
I
FSM
T
stg
T
J
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance
(MBR20L80CT)
(MBRF20L80CT)
−
Junction−to−Case
−
Junction−to−Ambient
−
Junction−to−Case
−
Junction−to−Ambient
Symbol
R
qJC
R
qJA
R
qJC
R
qJA
Value
2.0
70
4.2
75
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 3.0 A, T
J
= 25°C)
(i
F
= 3.0 A, T
J
= 125°C)
(i
F
= 10 A, T
J
= 25°C)
(i
F
= 10 A, T
J
= 125°C)
(i
F
= 20 A, T
J
= 25°C)
(i
F
= 20 A, T
J
= 125°C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, T
J
= 125°C)
(Rated DC Voltage, T
J
= 25°C)
2. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
Symbol
v
F
Min
−
−
−
−
−
−
−
−
Typ
0.45
0.35
0.56
0.51
0.69
0.62
30
0.06
Max
0.50
0.44
0.67
0.61
0.85
0.74
mA
50
0.50
Unit
V
i
R
DEVICE ORDERING INFORMATION
Device Order Number
MBR20L80CTG
MBRF20L80CTG
Package Type
TO−220AB
(Pb−Free)
TO−220FP
(Pb−Free)
Shipping
†
50 Units / Rail
50 Units / Rail
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