MBR835, MBR840, MBR845
Preferred Devices
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low−voltage,
high−frequency inverters, free wheeling diodes, and polarity
protection diodes.
http://onsemi.com
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•
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High Current Capability
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Guard−Ring for Stress Protection
Low Forward Voltage
High Surge Capacity
SCHOTTKY BARRIER
RECTIFIERS
8.0 AMPERES
Mechanical Characteristics:
•
Case: Epoxy, Molded
•
Weight: 1.1 gram (approximately)
•
Finish: All External Surfaces Corrosion Resistant and Terminal
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Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
220°C Max. for 10 Seconds, 1/16″ from case
Shipped in plastic bags, 500 per bag
Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to
the part number
Polarity: Cathode indicated by Polarity Band
ESD Protection: Human Body Model > 4000 V (Class 3)
ESD Protection:
Machine Model > 400 V (Class C)
AXIAL LEAD
CASE 267−05
(DO−201AD)
STYLE 1
MARKING DIAGRAM
MBR8xx
MBR8xx = Device Code
xx
= 35, 40 or 45
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MBR835
MBR840
MBR845
Average Rectified Forward Current
T
L
= 75°C (Psi
JL
= 12°C/W,
P.C. Board Mounting, see Note 2)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
Operating and Storage Junction
Temperature Range
(Reverse Voltage Applied)
Voltage Rate of Change (Rated V
R
)
Symbol
V
RRM
V
RWM
V
R
Max
Unit
V
ORDERING INFORMATION
Device
MBR835
MBR835RL
Package
Axial Lead
Axial Lead
Axial Lead
Axial Lead
Axial Lead
Axial Lead
Shipping
500 Units/Bag
1500/Tape & Reel
500 Units/Bag
1500/Tape & Reel
500 Units/Bag
1500/Tape & Reel
35
40
45
8.0
A
I
O
MBR840
MBR840RL
MBR845
MBR845RL
I
FSM
140
A
T
J
, T
stg
−65
to +125
°C
Preferred
devices are recommended choices for future use
and best overall value.
dv/dt
10
V/ns
©
Semiconductor Components Industries, LLC, 2006
September, 2006
−
Rev. 2
1
Publication Order Number:
MBR835/D
ONSEMI [ ON SEMICONDUCTOR ]
