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MBRAF3200T3G 参数 Datasheet PDF下载

MBRAF3200T3G图片预览
型号: MBRAF3200T3G
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装肖特基整流电源 [Surface Mount Schottky Power Rectifier]
分类和应用:
文件页数/大小: 4 页 / 106 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MBRAF3200T3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
Features
http://onsemi.com
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very High Blocking Voltage
200 V
150°C Operating Junction Temperature
Guard−Ring for Stress Protection
This is a Pb−Free Device
SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERE
200 VOLTS
Mechanical Charactersistics
Case: Epoxy, Molded, Epoxy Meets UL 94, V−0
Weight: 95 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
SMA−FL
CASE 403AA
PLASTIC
STYLE 6
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Cathode Polarity Band
Device Meets MSL 1 Requirements
ESD Ratings: Machine Model = A
ESD Ratings:
Human Body Model = 1B
MARKING DIAGRAM
AYWW
RACG
G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(T
L
= 100°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Operating Junction Temperature
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
Value
200
Unit
V
RAC
= Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
3.0
100
A
A
ORDERING INFORMATION
Device
MBRAF3200T3G
Package
SMA−FL
(Pb−Free)
Shipping
5000 / Tape & Reel
T
J
−65
to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
July, 2012
Rev. 0
1
Publication Order Number:
MBRAF3200T3/D