MBRF20100CT
Preferred Device
SWITCHMODEt
Schottky Power Rectifier
The SWITCHMODE Power Rectifier employs the Schottky Barrier
principle in a large area metal- to- silicon power diode.
State-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for use as
rectifiers in very low-voltage, high-frequency switching power
supplies, free wheeling diodes and polarity protection diodes.
Features
http://onsemi.com
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Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Matched Dual Die Construction
High Junction Temperature Capability
High dv/dt Capability
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guardring for Stress Protection
Epoxy Meets UL 94 V-0 @ 0.125 in
Electrically Isolated. No Isolation Hardware Required.
Pb-Free Package is Available*
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 100 VOLTS
1
2
3
ISOLATED TO-220
CASE 221D
STYLE 3
1
2
Mechanical Characteristics:
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Case: Epoxy, Molded
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Weight: 1.9 Grams (Approximately)
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Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
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Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
3
MARKING DIAGRAM
AYWW
B20100G
AKA
A
Y
WW
B20100
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb-Free Package
= Polarity Designator
ORDERING INFORMATION
Device
MBRF20100CT
MBRF20100CTG
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
Package
TO-220
TO-220
(Pb-Free)
Shipping
50 Units/Rail
50 Units/Rail
Preferred
devices are recommended choices for future use
and best overall value.
1
June, 2007 - Rev. 7
Publication Order Number:
MBRF20100CT/D
ONSEMI [ ON SEMICONDUCTOR ]
