MC14001B Series
B−Suffix Series CMOS Gates
MC14001B, MC14011B, MC14023B,
MC14025B, MC14071B, MC14073B,
MC14081B, MC14082B
The B Series logic gates are constructed with P and N channel
enhancement mode devices in a single monolithic structure
(Complementary MOS). Their primary use is where low power
dissipation and/or high noise immunity is desired.
Features
http://onsemi.com
MARKING
DIAGRAMS
14
PDIP−14
P SUFFIX
CASE 646
1
14
SOIC−14
D SUFFIX
CASE 751A
1
14
TSSOP−14
DT SUFFIX
CASE 948G
1
Value
−0.5
to +18.0
−0.5
to V
DD
+ 0.5
±
10
500
−55
to +125
−65
to +150
260
Unit
V
V
mA
mW
°C
°C
°C
Device
MC14001B
MC14011B
MC14023B
MC14025B
MC14071B
MC14073B
MC14081B
MC14082B
14
SOEIAJ−14
F SUFFIX
CASE 965
1
xx
= Specific Device Code
A
= Assembly Location
WL, L
= Wafer Lot
YY, Y
= Year
WW, W = Work Week
G or
G
= Pb−Free Package
(Note: Microdot may be in either location)
MC140xxB
ALYWG
14
0xxB
ALYWG
G
140xxBG
AWLYWW
MC140xxBCP
AWLYYWWG
•
Supply Voltage Range = 3.0 Vdc to 18 Vdc
•
All Outputs Buffered
•
Capable of Driving Two Low−power TTL Loads or One Low−power
Schottky TTL Load Over the Rated Temperature Range.
•
Double Diode Protection on All Inputs Except: Triple Diode
Protection on MC14011B and MC14081B
•
Pin−for−Pin Replacements for Corresponding CD4000 Series
B Suffix Devices
•
Pb−Free Packages are Available
MAXIMUM RATINGS
(Voltages Referenced to V
SS
)
Symbol
V
DD
V
in
, V
out
I
in
, I
out
P
D
T
A
T
stg
T
L
Parameter
DC Supply Voltage Range
Input or Output Voltage Range
(DC or Transient)
Input or Output Current
(DC or Transient) per Pin
Power Dissipation, per Package
(Note 1)
Ambient Temperature Range
Storage Temperature Range
Lead Temperature
(8−Second Soldering)
DEVICE INFORMATION
Description
Quad 2−Input NOR Gate
Quad 2−Input NAND Gate
Triple 3−Input NAND Gate
Triple 3−Input NOR Gate
Quad 2−Input OR Gate
Triple 3−Input AND Gate
Quad 2−Input AND Gate
Dual 4−Input AND Gate
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high−impedance circuit. For proper operation, V
in
and V
out
should be constrained
to the range V
SS
v
(V
in
or V
out
)
v
V
DD
.
Unused inputs must always be tied to an appropriate logic voltage level
(e.g., either V
SS
or V
DD
). Unused outputs must be left open.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
©
Semiconductor Components Industries, LLC, 2006
October, 2006
−
Rev. 6
1
Publication Order Number:
MC14001B/D
ONSEMI [ ON SEMICONDUCTOR ]
