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MC74HC08AFELG 参数 Datasheet PDF下载

MC74HC08AFELG图片预览
型号: MC74HC08AFELG
PDF下载: 下载PDF文件 查看货源
内容描述: 四2输入与门高性能硅栅CMOS [Quad 2−Input AND Gate High−Performance Silicon−Gate CMOS]
分类和应用: 栅极触发器逻辑集成电路光电二极管
文件页数/大小: 9 页 / 140 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MC74HC08A
DC CHARACTERISTICS
(Voltages Referenced to GND)
Symbol
V
IH
Parameter
Minimum High−Level Input Voltage
Condition
V
out
= 0.1V or V
CC
−0.1V
|I
out
|
20mA
V
CC
V
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
2.0
4.5
6.0
|I
out
|
2.4mA
|I
out
|
4.0mA
|I
out
|
5.2mA
3.0
4.5
6.0
2.0
4.5
6.0
|I
out
|
2.4mA
|I
out
|
4.0mA
|I
out
|
5.2mA
3.0
4.5
6.0
6.0
6.0
Guaranteed Limit
−55
to 25°C
1.50
2.10
3.15
4.20
0.50
0.90
1.35
1.80
1.9
4.4
5.9
2.48
3.98
5.48
0.1
0.1
0.1
0.26
0.26
0.26
±0.1
1.0
≤85°C
1.50
2.10
3.15
4.20
0.50
0.90
1.35
1.80
1.9
4.4
5.9
2.34
3.84
5.34
0.1
0.1
0.1
0.33
0.33
0.33
±1.0
10
≤125°C
1.50
2.10
3.15
4.20
0.50
0.90
1.35
1.80
1.9
4.4
5.9
2.20
3.70
5.20
0.1
0.1
0.1
0.40
0.40
0.40
±1.0
40
mA
mA
V
Unit
V
V
IL
Maximum Low−Level Input Voltage
V
out
= 0.1V or V
CC
0.1V
|I
out
|
20mA
V
V
OH
Minimum High−Level Output Voltage
V
in
= V
IH
or V
IL
|I
out
|
20mA
V
in
=V
IH
or V
IL
V
V
OL
Maximum Low−Level Output Voltage
V
in
= V
IH
or V
IL
|I
out
|
20mA
V
in
= V
IH
or V
IL
I
in
I
CC
Maximum Input Leakage Current
Maximum Quiescent Supply
Current (per Package)
V
in
= V
CC
or GND
V
in
= V
CC
or GND
I
out
= 0mA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
AC CHARACTERISTICS
(C
L
= 50pF, Input t
r
= t
f
= 6ns)
Symbol
t
PLH
,
t
PHL
Parameter
Maximum Propagation Delay, Input A or B to Output Y
(Figures 1 and 2)
V
CC
V
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
Guaranteed Limit
−55
to 25°C
75
30
15
13
75
27
15
13
10
≤85°C
95
40
19
16
95
32
19
16
10
≤125°C
110
55
22
19
110
36
22
19
10
Unit
ns
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
ns
C
in
Maximum Input Capacitance
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
Typical @ 25°C, V
CC
= 5.0 V, V
EE
= 0 V
C
PD
Power Dissipation Capacitance (Per Buffer)*
20
pF
* Used to determine the no−load dynamic power consumption: P
D
= C
PD
V
CC 2
f + I
CC
V
CC
. For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
http://onsemi.com
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