MCR716, MCR718
Preferred Device
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control, process control, temperature, light
and speed control.
Features
http://onsemi.com
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Small Size
Passivated Die for Reliability and Uniformity
Low Level Triggering and Holding Characteristics
Surface Mount Lead Form − Case 369C
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B
u
8000 V
Machine Model, C
u
400 V
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Pb−Free Packages are Available
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage
(Note 1) (T
J
= −40 to 110°C, Sine Wave,
50 to 60 Hz, Gate Open)
MCR716
MCR718
On−State RMS Current
(180° Conduction Angles; T
C
= 90°C)
Average On−State Current
(180° Conduction Angles; T
C
= 90°C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
J
= 110°C)
Circuit Fusing Consideration (t = 8.3 msec)
Forward Peak Gate Power
(Pulse Width
≤
1.0
msec,
T
C
= 90°C)
Forward Average Gate Power
(t = 8.3 msec, T
C
= 90°C)
Forward Peak Gate Current
(Pulse Width
≤
1.0
msec,
T
C
= 90°C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM,
V
RRM
400
600
I
T(RMS)
I
T(AV)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
T
J
T
stg
4.0
2.6
25
2.6
0.5
0.1
0.2
−40 to +110
−40 to +150
A
A
A
A
2
sec
W
W
A
°C
°C
1
2
3
4
Value
Unit
V
SCRs
4.0 AMPERES RMS
400 − 600 VOLTS
G
A
K
4
1 2
3
DPAK
CASE 369C
STYLE 4
MARKING DIAGRAM
YWW
MCR
71xG
Y
WW
MCR71x
G
= Year
= Work Week
= Device Code
x= M or N
= Pb−Free Package
PIN ASSIGNMENT
Cathode
Anode
Gate
Anode
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
November, 2005 − Rev. 5
Publication Order Number:
MCR716/D
ONSEMI [ ON SEMICONDUCTOR ]
