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MJ2955 参数 Datasheet PDF下载

MJ2955图片预览
型号: MJ2955
PDF下载: 下载PDF文件 查看货源
内容描述: 互补硅功率晶体管 [Complementary Silicon Power Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 85 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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2N3055, MJ2955
Preferred Device
Complementary Silicon
Power Transistors
. . . designed for general−purpose switching and amplifier
applications.
DC Current Gain − h
FE
= 20 −70 @ I
C
= 4 Adc
Collector−Emitter Saturation Voltage −
V
CE(sat)
= 1.1 Vdc (Max) @ I
C
= 4 Adc
Excellent Safe Operating Area
Pb−Free Package is Available
MAXIMUM RATINGS
http://onsemi.com
Rating
Symbol
V
CEO
V
CER
V
CB
V
EB
I
C
I
B
Value
60
70
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Collector−Emitter Voltage
15 A
POWER TRANSISTORS
COMPLEMENTARY SILICON
60 V
115 W
MARKING
DIAGRAM
PD, POWER DISSIPATION (WATTS)
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Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
100
7
Collector Current − Continuous
Base Current
15
7
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
115
0.657
W
W/°C
°C
Operating and Storage Junction Tempera-
ture Range
T
J
, T
stg
– 65 to + 200
TO−204AA (TO−3)
CASE 1−07
xxxx55
A
YYWW
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
qJC
Max
Unit
xxxx55 = Device Code
xxxx= 2N3055 or MJ2955
A
= Assembly Location
YY
= Year
WW = Work Week
x
= 1, 2, or 3
Thermal Resistance, Junction−to−Case
1.52
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
200
ORDERING INFORMATION
Device
2N3055
2N3055G
Package
TO−204AA
TO−204AA
(Pb−Free)
TO−204AA
TO−204AA
Shipping
100 Units / Tray
1 Units / Tubes
2N3055H
MJ2955
100 Units / Tray
100 Units / Tray
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
T
C
, CASE TEMPERATURE (°C)
Preferred
devices are recommended choices for future use
and best overall value.
Figure 1. Power Derating
©
Semiconductor Components Industries, LLC, 2004
1
April, 2004 − Rev. 4
Publication Order Number:
2N3055/D