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MJD2955-1G 参数 Datasheet PDF下载

MJD2955-1G图片预览
型号: MJD2955-1G
PDF下载: 下载PDF文件 查看货源
内容描述: 互补功率晶体管 [Complementary Power Transistors]
分类和应用: 晶体晶体管功率双极晶体管放大器
文件页数/大小: 7 页 / 184 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN)
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE D
C
A
B
c2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−−
0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
E
b3
L3
1
4
A
D
2
3
Z
DETAIL A
H
L4
b2
e
b
0.005 (0.13)
M
c
C
L2
GAUGE
PLANE
H
C
L
L1
DETAIL A
SEATING
PLANE
A1
ROTATED 90 CW
5
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6