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MJE172 参数 Datasheet PDF下载

MJE172图片预览
型号: MJE172
PDF下载: 下载PDF文件 查看货源
内容描述: 塑料互补硅功率晶体管40 - 60 - 80伏12.5沃茨 [Complementary Plastic Silicon Power Transistors 40 − 60 − 80 VOLTS 12.5 WATTS]
分类和应用: 晶体晶体管开关局域网
文件页数/大小: 6 页 / 83 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MJE170, MJE171, MJE172
(PNP), MJE180, MJE181,
MJE182 (NPN)
Preferred Device
Complementary Plastic
Silicon Power Transistors
The MJE170/180 series is designed for low power audio amplifier
and low current, high speed switching applications.
Features
http://onsemi.com
Collector−Emitter Sustaining Voltage −
V
CEO(sus)
= 40 Vdc − MJE170, MJE180
= 60 Vdc − MJE171, MJE181
= 80 Vdc − MJE172, MJE182
DC Current Gain −
h
FE
= 30 (Min) @ I
C
= 0.5 Adc
= 12 (Min) @ I
C
= 1.5 Adc
Current−Gain − Bandwidth Product −
f
T
= 50 MHz (Min) @ I
C
= 100 mAdc
Annular Construction for Low Leakages −
I
CBO
= 100 nA (Max) @ Rated V
CB
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Machine Model, C
Human Body Model, 3B
Pb−Free Packages are Available*
3 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
40 − 60 − 80 VOLTS
12.5 WATTS
TO−225AA
CASE 77−09
STYLE 1
3 2
1
MAXIMUM RATINGS
Collector−Base Voltage
MARKING DIAGRAM
Î Î
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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Î Î Î
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
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Î
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Î
Î
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Î
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Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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Î Î Î
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
Symbol
V
CB
Value
60
80
100
40
60
80
Unit
Vdc
MJE170, MJE180
MJE171, MJE181
MJE172, MJE182
MJE170, MJE180
MJE171, MJE181
MJE172, MJE182
Collector−Emitter Voltage
V
CEO
Vdc
Emitter−Base Voltage
Collector Current
Base Current
V
EB
I
C
I
B
7.0
3.0
6.0
1.0
Vdc
Adc
Adc
− Continuous
− Peak
Total Power Dissipation @ T
C
= 25_C
Derate above 25_C
Total Power Dissipation @ T
A
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
P
D
P
D
1.5
0.012
12.5
0.1
W
W/_C
W
W/_C
_C
T
J
, T
stg
−65 to +150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may be
affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
YWW
JE1xxG
Y
WW
JE1xx
G
= Year
= Work Week
= Specific Device Code
x = 70, 71, 72, 80, 81, or 82
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
1
January, 2006 − Rev. 9
Publication Order Number:
MJE171/D