MJE2955T (PNP)
MJE3055T (NPN)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and
switching applications.
Features
http://onsemi.com
•
DC Current Gain Specified to 10 A
•
High Current Gain
−
Bandwidth Product
−
f
T
= 2.0 MHz (Min) @ I
C
= 500 mAdc
•
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
P
D
(Note 1)
T
J
, T
stg
Value
60
70
5.0
10
6.0
75
0.6
−55
to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
°C
10 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 VOLTS
−
75 WATTS
TO−220AB
CASE 221A−09
STYLE 1
1
2
3
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Symbol
q
JC
Max
1.67
Unit
°C/W
MJExx55TG
AY WW
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Safe Area Curves are indicated by Figure 1. Both limits are applicable and
must be observed.
MJExx55T = Device Code
xx = 29 or 30
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2010
January, 2010
−
Rev. 9
1
Publication Order Number:
MJE2955T/D
ONSEMI [ ON SEMICONDUCTOR ]
