MJE700, MJE702, MJE703
(PNP) − MJE800, MJE802,
MJE803 (NPN)
Plastic Darlington
Complementary Silicon
Power Transistors
These devices are designed for general−purpose amplifier and
low−speed switching applications.
Features
http://onsemi.com
•
High DC Current Gain − h
FE
= 2000 (Typ) @ I
C
= 2.0 Adc
•
Monolithic Construction with Built−in Base−Emitter Resistors to
Limit Leakage − Multiplication
•
Choice of Packages − MJE700 and MJE800 Series
•
Pb−Free Packages are Available*
4.0 AMPERE
DARLINGTON POWER
TRANSISTORS
COMPLEMENTARY SILICON
40 WATT
50 WATT
MAXIMUM RATINGS
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Î Î
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Voltage
MJE700, MJE800
MJE702, MJE703, MJE802, MJE803
Collector−Base Voltage
MJE700, MJE800
MJE702, MJE703, MJE802, MJE803
Emitter−Base Voltage
Collector Current
Base Current
V
CEO
Vdc
60
80
60
80
V
CB
Vdc
V
EB
I
C
I
B
5.0
4.0
0.1
Vdc
Adc
Adc
Total Power Dissipation @ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
P
D
40
0.32
W
mW/_C
_C
T
J
, T
stg
–55 to +150
Rating
Symbol
Value
Unit
TO−225
CASE 77
STYLE 1
3
2 1
MARKING DIAGRAM
YWW
JEx0yG
THERMAL CHARACTERISTICS
Characteristic
Symbol
q
JC
Max
Unit
Thermal Resistance, Junction−to−Case
6.25
_C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Y
= Year
WW
= Work Week
JEx0y = Device Code
x = 7 or 8
y = 0, 2, or 3
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 8
Publication Order Number:
MJE700/D