MMBD301M3T5G
Silicon Hot-Carrier Diode
SCHOTTKY Barrier Diode
The MMBD301M3T5G device is a spin−off of our popular
SOT−23 three−leaded device. It is designed primarily for
high−efficiency UHF and VHF detector applications. It is readily
adaptable to many other fast switching RF and digital applications
and is housed in the SOT−723 surface mount package. This device is
ideal for low−power surface mount applications where board space is
at a premium.
Features
http://onsemi.com
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30 VOLTS
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
Extremely Low Minority Carrier Lifetime
−
15 ps (Typ)
Very Low Capacitance
−
1.5 pF (Max) @ V
R
= 15 V
Reduces Board Space
This is a Halide−Free Device
This is a Pb−Free Device
3
CATHODE
1
ANODE
MAXIMUM RATINGS
Rating
Reverse Voltage
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
R
P
F
Value
30
200
2.0
−55
to +125
−55
to +150
Unit
V
mW
mW/°C
°C
°C
3
MARKING
DIAGRAM
SOT−723
CASE 631AA
STYLE 2
AK M
2
1
AK
M
= Specific Device Code
= Date Code
T
J
T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
MMBD301M3T5G
Package
Shipping
†
SOT−723 8000/T
ape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (I
R
= 10
mA)
Total Capacitance (V
R
= 15 V, f = 1.0 MHz) Figure 1
Reverse Leakage (V
R
= 25 V) Figure 3
Forward Voltage (I
F
= 1.0 mAdc) Figure 4
Forward Voltage (I
F
= 10 mAdc) Figure 4
Symbol
V
(BR)R
C
T
I
R
V
F
V
F
Min
30
−
−
−
−
Typ
−
0.9
13
0.38
0.52
Max
−
1.5
200
0.45
0.6
Unit
V
pF
nAdc
Vdc
Vdc
©
Semiconductor Components Industries, LLC, 2009
January, 2009
−
Rev. 0
1
Publication Order Number:
MMBD301M3/D
ONSEMI [ ON SEMICONDUCTOR ]
