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MMBD6050LT3G 参数 Datasheet PDF下载

MMBD6050LT3G图片预览
型号: MMBD6050LT3G
PDF下载: 下载PDF文件 查看货源
内容描述: 开关二极管 [Switching Diode]
分类和应用: 二极管开关
文件页数/大小: 3 页 / 114 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
 浏览型号MMBD6050LT3G的Datasheet PDF文件第1页浏览型号MMBD6050LT3G的Datasheet PDF文件第3页  
MMBD6050LT1G
820
W
+10 V
2.0 k
100
mH
0.1
mF
DUT
50
W
OUTPUT
PULSE
GENERATOR
50
W
INPUT
SAMPLING
OSCILLOSCOPE
V
R
INPUT SIGNAL
90%
I
R
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
0.1
mF
t
r
10%
t
p
t
I
F
t
rr
t
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes:
3. t
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
TYPICAL CHARACTERISTICS
100
I F, FORWARD CURRENT (mA)
T
A
= 85°C
10
10
T
A
= 150°C
I R , REVERSE CURRENT (
m
A)
T
A
= -40°C
1.0
T
A
= 125°C
T
A
= 25°C
1.0
0.1
T
A
= 85°C
T
A
= 55°C
0.01
T
A
= 25°C
0.1
0.2
0.4
0.6
0.8
1.0
1.2
V
F
, FORWARD VOLTAGE (VOLTS)
0.001
0
10
20
30
40
50
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
C D , DIODE CAPACITANCE (pF)
0.64
0.60
0.56
0.52
0
2.0
4.0
6.0
8.0
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
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