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MMBF4416LT1G 参数 Datasheet PDF下载

MMBF4416LT1G图片预览
型号: MMBF4416LT1G
PDF下载: 下载PDF文件 查看货源
内容描述: JFET VHF / UHF放大器晶体管N通道 [JFET VHF/UHF Amplifier Transistor N-Channel]
分类和应用: 晶体放大器小信号场效应晶体管射频小信号场效应晶体管光电二极管
文件页数/大小: 6 页 / 149 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MMBF4416LT1
Preferred Device
JFET VHF/UHF Amplifier
Transistor
N−Channel
Features
http://onsemi.com
2 SOURCE
Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Drain−Source Voltage
Drain−Gate Voltage
Gate−Source Voltage
Gate Current
Symbol
V
DS
V
DG
V
GS
I
G
Value
30
30
30
10
Unit
Vdc
Vdc
Vdc
mAdc
3
Symbol
P
D
225
1.8
R
qJA
T
J
, T
stg
556
−55 to +150
mW
mW/°C
°C/W
°C
Max
Unit
1
2
SOT−23 (TO−236)
CASE 318
STYLE 10
1 DRAIN
3
GATE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
1
M6A M
G
G
M6A = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
MMBF4416LT1
MMBF4416LT1G
Package
SOT−23
Shipping
3,000 / Tape & Reel
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 3
Publication Order Number:
MMBF4416LT1/D