MMBF4416LT1
Preferred Device
JFET VHF/UHF Amplifier
Transistor
N−Channel
Features
http://onsemi.com
2 SOURCE
•
Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Drain−Source Voltage
Drain−Gate Voltage
Gate−Source Voltage
Gate Current
Symbol
V
DS
V
DG
V
GS
I
G
Value
30
30
30
10
Unit
Vdc
Vdc
Vdc
mAdc
3
Symbol
P
D
225
1.8
R
qJA
T
J
, T
stg
556
−55 to +150
mW
mW/°C
°C/W
°C
Max
Unit
1
2
SOT−23 (TO−236)
CASE 318
STYLE 10
1 DRAIN
3
GATE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
1
M6A M
G
G
M6A = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
MMBF4416LT1
MMBF4416LT1G
Package
SOT−23
Shipping
†
3,000 / Tape & Reel
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 3
Publication Order Number:
MMBF4416LT1/D