MMBT3904LT1G
General Purpose Transistor
NPN Silicon
Features
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter−Base Voltage
Collector Current
−
Continuous
Collector Current
−
Peak (Note 3)
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
Value
40
60
6.0
200
900
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) @T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2)
@T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
Unit
1
mW
mW/°C
°C/W
2
3
SOT−23 (TO−236)
CASE 318
STYLE 6
R
qJA
P
D
MARKING DIAGRAM
1AM M
G
G
1
1AM = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
300
2.4
R
qJA
T
J
, T
stg
417
−55
to +150
mW
mW/°C
°C/W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
3. Reference SOA curve.
ORDERING INFORMATION
Device
MMBT3904LT1G
MMBT3904LT3G
Package
Shipping
†
SOT−23 3000 / Tape & Reel
(Pb−Free)
SOT−23 10,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2011
January, 2011
−
Rev. 10
1
Publication Order Number:
MMBT3904LT1/D
ONSEMI [ ON SEMICONDUCTOR ]
