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MMBT4401LT1G 参数 Datasheet PDF下载

MMBT4401LT1G图片预览
型号: MMBT4401LT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 开关晶体管( NPN硅) [Switching Transistor(NPN Silicon)]
分类和应用: 晶体开关晶体管光电二极管
文件页数/大小: 8 页 / 156 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MMBT4401LT1
STATIC CHARACTERISTICS
3.0
h FE, NORMALIZED CURRENT GAIN
2.0
V
CE
= 1.0 V
V
CE
= 10 V
T
J
= 125°C
1.0
25°C
0.7
0.5
0.3
0.2
0.1
−55
°C
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
20
I
C
, COLLECTOR CURRENT (mA)
30
50
70
100
200
300
500
Figure 15. DC Current Gain
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
1.0
0.8
T
J
= 25°C
0.6
I
C
= 1.0 mA
10 mA
100 mA
500 mA
0.4
0.2
0
0.01
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7 1.0
I
B
, BASE CURRENT (mA)
2.0
3.0
5.0 7.0
10
20
30
50
Figure 16. Collector Saturation Region
1.0
T
J
= 25°C
0.8
VOLTAGE (VOLTS)
V
BE(sat)
@ I
C
/I
B
= 10
COEFFICIENT (mV/
°
C)
+0.5
0
−0.5
−1.0
−1.5
−2.0
−2.5
0.1 0.2
q
VB
for V
BE
0.5
50
1.0 2.0
5.0 10 20
I
C
, COLLECTOR CURRENT (mA)
100 200
500
q
VC
for V
CE(sat)
0.6
V
BE
@ V
CE
= 10 V
0.4
0.2
0
V
CE(sat)
@ I
C
/I
B
= 10
0.1 0.2
0.5
50
1.0 2.0 5.0 10 20
I
C
, COLLECTOR CURRENT (mA)
100 200
500
Figure 17. “On” Voltages
Figure 18. Temperature Coefficients
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