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MMBT4403WT1 参数 Datasheet PDF下载

MMBT4403WT1图片预览
型号: MMBT4403WT1
PDF下载: 下载PDF文件 查看货源
内容描述: 开关晶体管PNP硅 [Switching Transistor PNP Silicon]
分类和应用: 晶体开关晶体管
文件页数/大小: 6 页 / 173 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MMBT4403WT1
Switching Transistor
PNP Silicon
Features
Moisture Sensitivity Level: 1
ESD Rating: Human Body Model; 4 kV,
Machine Model; 400 V
Pb−Free Package is Available
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Symbol
P
D
R
qJA
T
J
, T
stg
Value
−40
−40
−5.0
−600
Unit
Vdc
Vdc
Vdc
mAdc
1
BASE
2
EMITTER
3
1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
T
A
= 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Max
150
833
−55
to +150
Unit
mW
°C/W
°C
2
SC−70
CASE 419
STYLE 3
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may
be affected.
2T D
2T = Specific Device Code
D = Date Code
ORDERING INFORMATION
Device
MMBT4403WT1
MMBT4403WT1G
Package
SC−70
SC−70
(Pb−Free)
Shipping
3000/T
ape & Reel
3000/T
ape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2005
March, 2005
Rev. 2
1
Publication Order Number:
MMBT4403WT1/D