MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT5550LT1/D
High Voltage Transistors
NPN Silicon
1
BASE
COLLECTOR
3
MMBT5550LT1
MMBT5551LT1*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
140
160
6.0
600
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
1
2
3
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING
MMBT5550LT1 = M1F; MMBT5551LT1 = G1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100°C)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
1. FR– 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300
m
s, Duty Cycle = 2.0%.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
V(BR)CEO
MMBT5550
MMBT5551
V(BR)CBO
MMBT5550
MMBT5551
V(BR)EBO
6.0
ICBO
MMBT5550
MMBT5551
MMBT5550
MMBT5551
IEBO
—
50
—
—
—
—
100
50
100
50
—
160
180
—
—
140
160
—
—
Vdc
Vdc
Vdc
nAdc
µAdc
nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1
ONSEMI [ ON SEMICONDUCTOR ]
