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MMBT5551LT1G 参数 Datasheet PDF下载

MMBT5551LT1G图片预览
型号: MMBT5551LT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 高电压晶体管 [High Voltage Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 6 页 / 101 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MMBT5550LT1, MMBT5551LT1
PACKAGE DIMENSIONS
SOT−23−3 (TO−236)
CASE 318−08
ISSUE AK
A
L
3
1
2
B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
V
G
C
D
H
K
J
DIM
A
B
C
D
G
H
J
K
L
S
V
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5