MMBT5551M3T5G
NPN High Voltage
Transistor
The MMBT5551M3T5G device is a spin−off of our popular
SOT−23 three−leaded device. It is designed for general purpose high
voltage applications and is housed in the SOT−723 surface mount
package. This device is ideal for low−power surface mount
applications where board space is at a premium.
Features
http://onsemi.com
•
Reduces Board Space
•
This is a Halide−Free Device
•
This is a Pb−Free Device
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter−Base Voltage
Collector Current
−
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
160
180
6.0
60
Unit
Vdc
Vdc
Vdc
mAdc
3
COLLECTOR
3
1
BASE
2
EMITTER
MARKING
DIAGRAM
SOT−723
CASE 631AA
STYLE 1
AH M
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR−5 Board (Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
265
2.1
R
qJA
P
D
470
640
5.1
R
qJA
T
J
, T
stg
195
−55
to
+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
2
1
AH
M
= Specific Device Code
= Date Code
ORDERING INFORMATION
Device
MMBT5551M3T5G
Package
Shipping
†
SOT−723 8000/Tape & Reel
(Pb−Free)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2009
January, 2009
−
Rev. 0
1
Publication Order Number:
MMBT5551M3/D
ONSEMI [ ON SEMICONDUCTOR ]
