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MMBTA42LT1 参数 Datasheet PDF下载

MMBTA42LT1图片预览
型号: MMBTA42LT1
PDF下载: 下载PDF文件 查看货源
内容描述: 高压晶体管( NPN硅) [High Voltage Transistors(NPN Silicon)]
分类和应用: 晶体晶体管高压
文件页数/大小: 4 页 / 58 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MMBTA42LT1,
MMBTA43LT1
MMBTA42LT1 is a Preferred Device
High Voltage Transistors
NPN Silicon
Features
http://onsemi.com
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current−Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
MMBTA42
300
300
6.0
500
MMBTA43
200
200
6.0
Unit
Vdc
Vdc
Vdc
mAdc
COLLECTOR
3
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board (Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
Unit
mW
mW/°C
°C/W
mW
1
2
3
SOT−23 (TO−236)
CASE 318
STYLE 6
2.4
R
qJA
T
J
, T
stg
417
−55 to
+150
mW/°C
°C/W
°C
MARKING DIAGRAMS
1D X
M1E X
MMBTA42LT1
MMBTA43LT1
1D, M1E = Specific Device Code
X
= Date Code
ORDERING INFORMATION
Device
MMBTA42LT1
MMBTA42LT1G
MMBTA43LT1
MMBTA43LT3
Package
SOT−23
SOT−23
SOT−23
SOT−23
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2003
1
November, 2003 − Rev. 5
Publication Order Number:
MMBTA42LT1/D