MMBTA92LT1
Preferred Device
High Voltage Transistor
PNP Silicon
Features
•
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
MMBTA92
−300
−300
−5.0
−500
Unit
Vdc
Vdc
Vdc
mAdc
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambi-
ent
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
−55 to +150
Unit
mW
1
3
MARKING
DIAGRAM
mW/°C
°C/W
mW
mW/°C
°C/W
°C
2
2D
SOT−23 (TO−236AF)
CASE 318
Style 6
2D
= Specific Device Code
ORDERING INFORMATION
Device
MMBTA92LT1
MMBTA92LT1G
MMBTA92LT3
Package
SOT−23
SOT−23
SOT−23
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
10000 / Tape & Reel
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2003
1
November, 2003 − Rev. 4
Publication Order Number:
MMBTA92LT1/D
ONSEMI [ ON SEMICONDUCTOR ]
