MMBTA05LT1G,
MMBTA06LT1G
Driver Transistors
NPN Silicon
Features
http://onsemi.com
COLLECTOR
3
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
MMBTA05LT1
MMBTA06LT1
Collector
−Base
Voltage
MMBTA05LT1
MMBTA06LT1
Emitter
−Base
Voltage
Collector Current
−
Continuous
Symbol
V
CEO
Value
60
80
Vdc
60
80
4.0
500
Vdc
mAdc
Unit
Vdc
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
V
CBO
V
EBO
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
−55
to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
MMBTA05LT1
1H M
G
G
MARKING DIAGRAMS
1GM M
G
G
MMBTA06LT1
1H, 1GM = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
©
Semiconductor Components Industries, LLC, 2010
October, 2010
−
Rev. 5
1
Publication Order Number:
MMBTA05LT1/D
ONSEMI [ ON SEMICONDUCTOR ]
