MMBV3700LT1G
High Voltage Silicon Pin
Diodes
These devices are designed primarily for VHF band switching
applications but are also suitable for use in general−purpose switching
circuits. They are supplied in a cost−effective plastic package for
economical, high−volume consumer and industrial requirements.
They are also available in surface mount.
Features
http://onsemi.com
SOT−23
1
Anode
3
Cathode
•
Long Reverse Recovery Time t
rr
= 300 ns (Typ)
•
Rugged PIN Structure Coupled with Wirebond Construction for
Optimum Reliability
•
Low Series Resistance @ 100 MHz
−
R
S
= 0.7
W
(Typ) @ I
F
= 10 mA
•
Reverse Breakdown Voltage = 200 V (Min)
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
Symbol
V
R
P
D
Value
200
200
2.8
+125
−55
to +150
Unit
V
mW
mW/°C
°C
°C
MARKING
DIAGRAM
3
1
2
4R M
G
G
1
SOT−23 (TO−236AB)
CASE 318
−08
STYLE 8
4R = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
T
J
T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
MMBV3700LT1G
Package
SOT−23
(Pb−Free)
Shipping
†
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2009
August, 2009
−
Rev. 5
1
Publication Order Number:
MMBV3700LT1/D
ONSEMI [ ON SEMICONDUCTOR ]
