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MMDF1300R2 参数 Datasheet PDF下载

MMDF1300R2图片预览
型号: MMDF1300R2
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET 3安培, 25伏 [Power MOSFET 3 Amps, 25 Volts]
分类和应用:
文件页数/大小: 4 页 / 47 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MMDF1300
Power MOSFET
3 Amps, 25 Volts
Complementary SO–8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOSt devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives. The
avalanche energy is specified to eliminate the guesswork in designs
where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive – Can be Driven by Logic ICs
Miniature SO–8 Surface Mount Package – Saves Board Space
Diode Exhibits High Speed, with Soft Recovery
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage
Drain Current – Continuous
N–Channel
P–Channel
Drain Current – Pulsed
N–Channel
P–Channel
Operating and Storage Temperature Range
Total Power Dissipation @ TA = 25°C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 10 Vdc,
IL = 3.0 Apk, L = 25 mH, RG = 25
W)
Thermal Resistance – Junction–to–Ambient
(Note 1.)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 sec.
Symbol
VDSS
VGS
ID
3.0
2.0
IDM
9.0
6.0
TJ, Tstg
PD
EAS
–65 to
+150
1.8
°C
Watts
mJ
Apk
Value
25
±
20
Unit
Vdc
Vdc
Adc
8
1
1300
L
Y
WW
= Device Code
= Location Code
= Year
= Work Week
SO–8, Dual
CASE 751
STYLE 11
1300
LYWW
http://onsemi.com
3 AMPERES
25 VOLTS
RDS(on) = 100 mW (N–Channel)
RDS(on) = 210 mW (P–Channel)
N–Channel
D
P–Channel
D
G
S
G
S
MARKING
DIAGRAM
PIN ASSIGNMENT
113
Source–1
1
2
3
4
8
7
6
5
Drain–1
Drain–1
Drain–2
Drain–2
R
θJA
TL
66.3
260
°C/W
°C
Gate–1
Source–2
Gate–2
1. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided),
10 sec. max.
Device
MMDF1300R2
Top View
ORDERING INFORMATION
Package
SO–8
Shipping
2500 Tape & Reel
©
Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 1
Publication Order Number:
MMDF1300/D