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MMJT9410 参数 Datasheet PDF下载

MMJT9410图片预览
型号: MMJT9410
PDF下载: 下载PDF文件 查看货源
内容描述: 双极功率晶体管NPN硅 [Bipolar Power Transistors NPN Silicon]
分类和应用: 晶体晶体管功率双极晶体管光电二极管
文件页数/大小: 5 页 / 74 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MMJT9410
Preferred Device
Bipolar Power Transistors
NPN Silicon
Features
Collector −Emitter Sustaining Voltage −
V
CEO(sus)
= 30 Vdc (Min) @ I
C
= 10 mAdc
High DC Current Gain −
h
FE
= 85 (Min) @ I
C
= 0.8 Adc
= 60 (Min) @ I
C
= 3.0 Adc
Low Collector −Emitter Saturation Voltage −
V
CE(sat)
= 0.2 Vdc (Max) @ I
C
= 1.2 Adc
= 0.45 Vdc (Max) @ I
C
= 3.0 Adc
SOT−223 Surface Mount Packaging
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
Pb−Free Package is Available
http://onsemi.com
POWER BJT
I
C
= 3.0 AMPERES
BV
CEO
= 30 VOLTS
V
CE(sat)
= 0.2 VOLTS
C 2,4
4
C
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Base Current − Continuous
Collector Current
− Continuous
− Peak
Symbol
V
CEO
V
CB
V
EB
I
B
I
C
P
D
Value
30
45
±
6.0
1.0
3.0
5.0
3.0
24
1.7
0.75
T
J,
T
stg
−55 to
+150
°C
A
Y
W
9410
G
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
mW/°C
W
1
B1
E3
Schematic
B
C
E
1 2 3
Top View
Pinout
MARKING
DIAGRAM
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Total P
D
@ T
A
= 25°C mounted on 1” sq.
(645 sq. mm) Collector pad on FR−4
bd material
Total P
D
@ T
A
= 25°C mounted on 0.012” sq.
(7.6 sq. mm) Collector pad on FR−4 bd material
Operating and Storage Junction
Temperature Range
SOT−223 (TO−261)
CASE 318E
STYLE 1
1
AYW
9410
G
G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient on
1” sq. (645 sq. mm) Collector pad on FR−4 bd
material
Thermal Resistance, Junction−to−Ambient on
0.012” sq. (7.6 sq. mm) Collector pad on
FR−4 bd material
Maximum Lead Temperature for Soldering
Purposes, 1/8” from case for 5 seconds
Symbol
R
qJC
R
qJA
Max
42
75
Unit
°C/W
°C/W
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MMJT9410
MMJT9410G
Package
SOT−223
SOT−223
(Pb−Free)
Shipping
1000 / Tape & Reel
1000 / Tape & Reel
R
qJA
165
°C/W
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
October, 2006 − Rev. 6
Publication Order Number:
MMJT9410/D