ON Semiconductort
Quad Amplifier/Switch
Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
VCEO
VCB
VEB
IC
Each
Transistor
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage
Junction Temperature Range
PD
0.4
3.2
PD
0.66
5.3
TJ, Tstg
1.92
15.4
–55 to +150
800
6.4
mW
mW/°C
Watts
mW/°C
°C
Value
40
60
6.0
200
Four
Transistors
Equal Power
Unit
Vdc
Vdc
MMPQ3904
ON Semiconductor Preferred Device
16
1
Vdc
mAdc
CASE 751B–05, STYLE 4
SO–16
1
2
3
4
5
6
7
16
15
14
13
12
11
10
9
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
8
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 10
mAdc,
IE = 0)
Emitter–Base Breakdown Voltage
(IE = 10
mAdc,
IC = 0)
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
40
60
6.0
—
—
—
—
—
—
—
—
—
—
50
50
Vdc
Vdc
Vdc
nAdc
nAdc
1. Pulse Test: Pulse Width
v
300
ms;
Duty Cycle
v
2.0%.
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
©
Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 2
Publication Order Number:
MMPQ3904/D
ONSEMI [ ON SEMICONDUCTOR ]
