MMPQ3906
Preferred Device
Quad Amplifier/Switch
Transistor
PNP Silicon
http://onsemi.com
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter
−Base
Voltage
Collector Current
−
Continuous
Symbol
V
CEO
V
CB
V
EB
I
C
Value
−40
−40
−5.0
−200
Each
Transistor
Power Dissipation @ T
A
= 25°C
Derate above 25°C
Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
P
D
200
3.2
0.66
5.3
Four
Transistors
Equal Power
Power Dissipation @ T
A
= 25°C
Derate above 25°C
Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage
Junction Temperature Range
P
D
P
D
T
J
, T
stg
800
6.4
1.92
15.4
−55
to +150
mW
mW/°C
Watts
mW/°C
°C
mW
mW/°C
Watts
mW/°C
16
1
16
15
14
13
12
11
10
9
Unit
Vdc
Vdc
Vdc
mAdc
2
3
4
5
6
7
8
1
SO−16
CASE 751B
STYLE 4
MARKING DIAGRAM
MMPQ3906
AWLYWW
MMPQ3906 = Specific Device Code
A
= Assembly Location
WL
= Wafer Lot
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
MMPQ3906
Package
SO−16
Shipping
48 Units/Rail
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
August, 2006
−
Rev. 4
1
Publication Order Number:
MMPQ3906/D
ONSEMI [ ON SEMICONDUCTOR ]
