MMVL809T1
Silicon Tuning Diode
This device is designed for 900 MHz frequency control and tuning
applications. It provides solid−state reliability in replacement of
mechanical tuning methods.
Features
•
•
•
•
Controlled and Uniform Tuning Ratio
Surface Mount Package
Available in 8 mm Tape and Reel
Pb−Free Package is Available
http://onsemi.com
4.5 − 6.1 pF
VOLTAGE VARIABLE
CAPACITANCE DIODE
1
CATHODE
2
ANODE
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Symbol
V
R
I
F
Value
20
20
Unit
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
T
A
= 25°C (Note 1)
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
200
1.57
R
qJA
T
J
, T
stg
635
150
mW
mW/°C
°C/W
°C
Max
Unit
1
2
PLASTIC
SOD−323
CASE 477
STYLE 1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 Minimum Pad
MARKING DIAGRAM
5K M
G
G
5K = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
MMVL809T1
MMVL809T1G
Package
Shipping
†
SOD−323 3000 / Tape & Reel
SOD−323 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 2
Publication Order Number:
MMVL809T1/D
ONSEMI [ ON SEMICONDUCTOR ]
