MPF4392, MPF4393
100
r ds(on), DRAIN−SOURCE ON−STATE
RESISTANCE (OHMS)
90
80
70
60
50
40
30
20
10
0
V
GS(off)
r
DS(on)
@ V
GS
= 0
T
channel
= 25°C
10
9.0
V GS , GATE−SOURCE VOLTAGE
(VOLTS)
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
I
DSS
, ZERO−GATE VOLTAGE DRAIN CURRENT (mA)
NOTE 2
Figure 10. Effect of I
DSS
On Drain−Source
Resistance and Gate−Source Voltage
The Zero−Gate−Voltage Drain Current (I
DSS
), is the
principle determinant of other J−FET characteristics.
Figure 10 shows the relationship of Gate−Source Off
Voltage (V
GS(off)
) and Drain−Source On Resistance
(r
ds(on)
) to I
DSS
. Most of the devices will be within
±10%
of the values shown in Figure 10. This data will be useful
in predicting the characteristic variations for a given part
number.
For example:
Unknown
r
ds(on)
and V
GS
range for an MPF4392
The electrical characteristics table indicates that an
MPF4392 has an I
DSS
range of 25 to 75 mA. Figure 10
shows r
ds(on)
= 52
W
for I
DSS
= 25 mA and 30
W
for I
DSS
75 mA. The corresponding V
GS
values are 2.2 V and
4.8 V.
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